Ordering number : ENA1648B CPH3448 Power MOSFET CPH3448 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 mA DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 mA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =2A 3.4 S DS D R (on)1 I =2A, V =4.5V 38 50 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =1A, V =2.5V 51 72 m DS D GS R (on)3 I =0.5A, V =1.8V 80 130 m DS D GS Input Capacitance Ciss V =10V, f=1MHz 430 pF DS Output Capacitance Coss V =10V, f=1MHz 59 pF DS Reverse Transfer Capacitance Crss V =10V, f=1MHz 38 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 10 ns d Rise Time t See specified Test Circuit. 41 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 36 ns d Fall Time t See specified Test Circuit. 37 ns f Total Gate Charge Qg V =15V, V =4.5V, I =4A 4.7 nC DS GS D Gate-to-Source Charge Qgs V =15V, V =4.5V, I =4A 0.8 nC DS GS D Gate-to-Drain Miller Charge Qgd V =15V, V =4.5V, I =4A 1.1 nC DS GS D Diode Forward Voltage V I =4A, V =0V 0.82 1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =15V DD V IN 4.5V I =2A D 0V R =7.5 L V V IN D OUT PW=10ms D.C.1% G P.G 50 CPH3448 S Ordering Information Device Package Shipping memo CPH3448-TL-H CPH3 3,000pcs./reel Pb-Free and Halogen Free CPH3448-TL-W No. A1648-2/5