Ordering number : EN7177B CPH5905 N-Channel JFET and NPN Bipolar Transistor CPH5905 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max FET Gate-to-Drain Breakdown Voltage V I =--10A, V =0V --15 V (BR)GDS G GS Gate Cutoff Current I V =--10V, V =0V --1.0 nA GSS GS DS Cutoff Voltage V (off) V =5V, I =100A --0.4 --0.7 --1.5 V GS DS D Drain Current I V =5V, V =0V 10.0* 32.0* mA DSS DS GS Forward Transfer Admittance yfs V =5V, V =0V, f=1kHz 24 35 mS DS GS Input Capacitance Ciss V =5V, V =0V, f=1kHz 10.0 pF DS GS Reverse Transfer Capacitance Crss V =5V, V =0V, f=1kHzz 2.9 pF DS GS Noise Figure NF V =5V, Rg=1k, I =1mA, f=1kHz 1.0 dB DS D TR Collector Cutoff Current I V =35V, I =0A 0.1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 0.1 A EBO EB C DC Current Gain h V =6V, I =1mA 135 400 FE CE C Gain-Bandwidth Product f V =6V, I =10mA 200 MHz T CE C Output Capacitance Cob V =6V, f=1MHz 1.7 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =50mA, I =5mA 0.08 0.4 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =50mA, I =5mA 0.8 1.0 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 55 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 6 V (BR)EBO E C Turn-On Time t 0.15 ns on Storage Time t See speci ed Test Circuit. 0.75 ns stg Fall Time t 0.20 ns f * : The CPH5905 is classi ed by I as follows : (unit : mA) DSS Rank G H I 10.0 to 20.0 16.0 to 32.0 DSS The speci cations shown above are for each individual FET or transistor. Switching Time Test Circuit I B1 PC=20 s OUTPUT D.C.1% I B2 INPUT 1k R L 2k V R 50 + + 220 F 470 F V = --5V V =20V BE CC 10I = --10I =I =10mA B1 B2 C Ordering Information Device Package Shipping memo CPH5905G-TL-E CPH5 3,000pcs./reel Pb Free CPH5905H-TL-E CPH5 3,000pcs./reel No.7177-2/8