Ordering number : ENA1529B CPH6350 P-Channel Power MOSFET CPH6350 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--3A 5.4 S DS D R (on)1 I =--3A, V =--10V 33 43 m DS D GS Static Drain to Source On-State Resistance R (on)2 I =--1.5A, V =--4.5V 58 82 m DS D GS R (on)3 I =--1.5A, V =--4V 61 86 m DS D GS Input Capacitance Ciss 600 pF Output Capacitance Coss V =--10V, f=1MHz 145 pF DS Reverse Transfer Capacitance Crss 110 pF Turn-ON Delay Time t (on) 7.4 ns d Rise Time t 27 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 62 ns d Fall Time t 45 ns f Total Gate Charge Qg 13 nC Gate to Source Charge Qgs V =--15V, V =--10V, I =--6A 1.8 nC DS GS D Gate to Drain Miller Charge Qgd 3.2 nC Diode Forward Voltage V I =--6A, V =0V --0.87 --1.2 V SD S GS Switching Time Test Circuit V V = --15V DD IN 0V --10V I = --3A D V IN R =5 L D V OUT PW=10s D.C.1% G CPH6350 P.G 50 S No. A1529-2/6