CSPEMI202FCTAG 2 Channel Headset Microphone EMI Filter with ESD Protection Product Description www.onsemi.com The CSPEMI202FCTAG is a dual lowpass filter array integrating two pistyle filters (CRC) that reduce EMI/RFI emissions while at the same time providing ESD protection. This part is customdesigned to interface with a microphone port on a cellular telephone or similar device. Each high quality filter provides more than 35 dB attenuation in the 800 2700 MHz range. These pi style filters support WLCSP5 bidirectional filtering, controlling EMI both to and from a microphone AG SUFFIX CASE 567LT element. They also support bipolar signals, enabling audio signals to pass through without distortion. In addition, the CSPEMI202AG provides a very high level of ELECTRICAL SCHEMATIC protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The diodes safely dissipate ESD 68 strikes of 8 kV, the maximum requirement of the IEC 6100042 A1 C1 international standard. Using the MILSTD 883 (Method 3015) 47 pF 47 pF specification for Human Body Model (HBM) ESD, the device provides protection for contact discharges to greater than 15 kV. The CSPEMI202FCTAG is particularly wellsuited for portable 68 electronics (e.g. cellular telephones, PDAs, notebook computers) A3 C3 because of its small package format and low weight. The 47 pF 47 pF CSPEMI202FCTAG is available in a spacesaving, lowprofile Chip Scale Package with RoHS compliant leadfree finishing. B2 Features Two Channels of EMI Filtering PiStyle EMI Filters in a CapacitorResistorCapacitor (CRC) Network Greater than 40 dB Attenuation at 1 GHz MARKING DIAGRAM 8 kV ESD Protection on each Channel + AE (IEC 6100042 Level 4, Contact Discharge) 15 kV ESD Protection on each Channel (HBM) AE = CSPEMI202FC Supports Bipolar Signals Ideal for Audio Applications Chip Scale Package Features Extremely Low Lead Inductance for Optimum Filter and ESD Performance ORDERING INFORMATION 5Bump, 0.930 x 1.410 mm Footprint Chip Scale Package (CSP) These Devices are PbFree and are RoHS Compliant Device Package Shipping CSPEMI202FCTAG CSP5 3500 / Tape & Applications (PbFree) Reel EMI Filtering and ESD Protection for Headset Microphone Ports Wireless Handsets For information on tape and reel specifications, including part orientation and tape sizes, please Handheld PCs / PDAs refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. MP3 Players Digital Camcorders Notebooks Desktop PCs Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2015 Rev. 0 CSPEMI202FC/D GND MIC IN2 MIC IN1 MIC OUT2 MIC OUT1CSPEMI202FCTAG PACKAGE / PINOUT DIAGRAMS Table 1. PIN DESCRIPTIONS 5bump CSP Package Top View Bottom View (Bumps Down View) (Pins Up View) Pin Name Description Orientation A1 MIC IN1 Microphone Input 1 (from microphone) 1 2 3 Marking A3 MIC IN2 Microphone Input 2 (from microphone) + A C1 C3 B2 GND Device Ground Orientation Marking C1 MIC OUT1 Microphone Output 1 (to audio circuitry) B B2 A1 C3 MIC OUT1 Microphone Output 2 (to audio circuitry) C A1 A3 CSPEMI202FC CSP Package SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Storage Temperature Range 65 to +150 C DC Power per Resistor 100 mW DC Package Power Rating 200 mW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature Range 40 to +85 C Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Units R Resistance 61 68 75 1 C Channel Capacitance 76 94 112 pF 1 I Diode Leakage Current V = 5.0 V 1.0 A LEAK IN V Signal Voltage I = 10 mA V SIG LOAD Positive Clamp 5 7 15 Negative Clamp 15 10 5 V Insystem ESD Withstand Voltage (Note 2) kV ESD a) Human Body Model, MILSTD883, Method 3015 15 b) Contact Discharge per IEC 6100042 Level 4 8 V Clamping Voltage during ESD Discharge (Notes 2 and 3) V CL MILSTD883 (Method 3015), 8 kV Positive Transients +15 Negative Transients 19 f Cutoff frequency 60 MHz C Z = 50 , Z = 50 SOURCE LOAD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. T = 25C unless otherwise specified. A 2. ESD applied to input and output pins with respect to GND, one at a time. 3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping voltage is measured at Pin C1. www.onsemi.com 2