DAN222M3T5G ON Semiconductor

DAN222M3T5G Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT723 package which is designed for low DAN222M3T5G ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current (Note 2) I V = 70 V 0.1 A R R Forward Voltage V I = 100 mA 1.2 V F F Reverse Breakdown Voltage V I = 100 A 80 V R R Diode Capacitance C V = 6.0 V, f = 1.0 MHz 3.5 pF D R Reverse Recovery Time (Note 3) t I = 5.0 mA, V = 6.0 V, 4.0 ns rr F R R = 100 , I = 0.1 I L rr R 2. For each diode while other is not forward biased. 3. t Test Circuit on following page. rr TYPICAL ELECTRICAL CHARACTERISTICS 100 10 +150C 1.0 10 +125C +85C 1.0 T = 150C A 0.1 +55C 125C 0.01 0.1 25C - 40C - 55C +25C 0.01 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 10 20 30 40 50 60 70 80 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Reverse Current 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0 510 15 20 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Diode Capacitance