Product Information

DAN222M3T5G

DAN222M3T5G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Diodes - General Purpose, Power, Switching
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.299 ea
Line Total: USD 0.3

4782 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
10466 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 10
Multiples : 10

Stock Image

DAN222M3T5G
ON Semiconductor

10 : USD 0.056
100 : USD 0.0494
300 : USD 0.0462
1000 : USD 0.0437
5000 : USD 0.0371
8000 : USD 0.036

4685 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

DAN222M3T5G
ON Semiconductor

1 : USD 0.299
10 : USD 0.2082
100 : USD 0.0851
1000 : USD 0.0517
2500 : USD 0.0471
8000 : USD 0.0368
48000 : USD 0.0345
96000 : USD 0.0333

6246 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 20
Multiples : 20

Stock Image

DAN222M3T5G
ON Semiconductor

20 : USD 0.078
100 : USD 0.0624
340 : USD 0.0481
940 : USD 0.0455

7760 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 8000
Multiples : 8000

Stock Image

DAN222M3T5G
ON Semiconductor

8000 : USD 0.0394
16000 : USD 0.0378
24000 : USD 0.037
48000 : USD 0.0343
56000 : USD 0.0336

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Qualification
Packaging
Operating Temperature Range
Brand
Height
Length
Width
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

DAN222M3T5G Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT723 package which is designed for low DAN222M3T5G ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current (Note 2) I V = 70 V 0.1 A R R Forward Voltage V I = 100 mA 1.2 V F F Reverse Breakdown Voltage V I = 100 A 80 V R R Diode Capacitance C V = 6.0 V, f = 1.0 MHz 3.5 pF D R Reverse Recovery Time (Note 3) t I = 5.0 mA, V = 6.0 V, 4.0 ns rr F R R = 100 , I = 0.1 I L rr R 2. For each diode while other is not forward biased. 3. t Test Circuit on following page. rr TYPICAL ELECTRICAL CHARACTERISTICS 100 10 +150C 1.0 10 +125C +85C 1.0 T = 150C A 0.1 +55C 125C 0.01 0.1 25C - 40C - 55C +25C 0.01 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 10 20 30 40 50 60 70 80 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Reverse Current 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0 510 15 20 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Diode Capacitance

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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