DBA150G ON Semiconductor

DBA150G 15.0A Single-Phase Bridge Rectifier Features Plastic molded structure www.onsemi.com Glass passivation for high reliability Peak reverse voltage: V =600V RM Average rectified current: I =15A O ELECTRICAL CONNECTION SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Parameter Symbol Value Unit V Peak Reverse Voltage 600 V RM Average Rectified Current 4.5 A Ta = 40C I Average Rectified Current O Ta = 40C 15.0 A 3 with a 270 270 3.0mm Cu fin Surge Forward Current I 200 A FSM 50Hz sine wave, 1cycle T Junction Temperature 150 j C Storage Temperature Tstg 40 to 150 C V Insulation Voltage 2 kV IS Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING 1 : Lot No. ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : February 2016 - Rev. 0 DBA150G/D DBA150G ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max V I = 7.5A (Note 4) Forward Voltage 1.05 V F F I V : At each V (Note 4) Reverse Current 10 A R R RM Thermal Resistance Rth(j-c) Junction-Case 2.3 C / W Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 3 : Tightening torque : 0.98Nm max. Note 4 : Per constituent element of bridge. www.onsemi.com 2