DTA123EM3T5G ON Semiconductor

DTA123EM3T5G electronic component of ON Semiconductor
DTA123EM3T5G ON Semiconductor
DTA123EM3T5G Bipolar Transistors - Pre-Biased
DTA123EM3T5G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of DTA123EM3T5G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTA123EM3T5G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No.DTA123EM3T5G
Manufacturer:ON Semiconductor
Category:Bipolar Transistors - Pre-Biased
Description:ON Semiconductor Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Datasheet:DTA123EM3T5G Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 0.5 ea
Line Total: USD 0.5 
Availability : 5278
  
Ship by Fri. 19 Jun to Tue. 23 Jun
QtyUnit Price
1$ 0.5
10$ 0.4313
100$ 0.2426
500$ 0.1672
1000$ 0.1452
2500$ 0.1276
5000$ 0.0616
8000$ 0.0616
  

Availability5278
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5
10$ 0.4313
100$ 0.2426
500$ 0.1672
1000$ 0.1452
2500$ 0.1276
5000$ 0.0616
8000$ 0.0616

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
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Pd - Power Dissipation
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Dc Current Gain Hfe Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTA123EM3T5G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA123EM3T5G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DATA SHEET www.onsemi.com PIN CONNECTIONS Digital Transistors (BRT) PIN 3 COLLECTOR R1 = 2.2 k , R2 = 2.2 k (OUTPUT) PIN 1 PNP Transistors with Monolithic Bias R1 BASE Resistor Network (INPUT) R2 PIN 2 MUN2131, MMUN2131L, EMITTER (GROUND) MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 MARKING DIAGRAMS This series of digital transistors is designed to replace a single SC59 device and its external resistor bias network. The Bias Resistor XX M CASE 318D Transistor (BRT) contains a single transistor with a monolithic bias STYLE 1 network consisting of two resistors a series base resistor and a base 1 emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. SOT23 XXX M CASE 318 Features STYLE 6 1 Simplifies Circuit Design Reduces Board Space SC70/SOT323 XX M Reduces Component Count CASE 419 STYLE 3 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 SC75 Qualified and PPAP Capable CASE 463 XX M These Devices are PbFree, Halogen Free/BFR Free and are RoHS STYLE 1 1 Compliant SOT723 MAXIMUM RATINGS (T = 25C) XX M A CASE 631AA STYLE 1 Rating Symbol Max Unit 1 SOT1123 CollectorBase Voltage V 50 Vdc CBO X M CASE 524AA 1 CollectorEmitter Voltage V 50 Vdc CEO STYLE 1 Collector Current Continuous I 100 mAdc C XXX = Specific Device Code M = Date Code* Input Forward Voltage V 12 Vdc IN(fwd) =PbFree Package Input Reverse Voltage V 10 Vdc IN(rev) (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation may vary depending up- device. If any of these limits are exceeded, device functionality should not be on manufacturing location. assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2021 Rev. 6 DTA123E/DMUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2131T1G 6H SC59 3000 / Tape & Reel (PbFree) MMUN2131LT1G, NSVMMUN2131LT1G* A6H SOT23 3000 / Tape & Reel (PbFree) MUN5131T1G, NSVMUN5131T1G* 6H SC70/SOT323 3000 / Tape & Reel (PbFree) DTA123EET1G 6H SC75 3000 / Tape & Reel (PbFree) DTA123EM3T5G, NSVDTA123EM3T5G* 6H SOT723 8000 / Tape & Reel (PbFree) NSBA123EF3T5G P (180)** SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ** (xx) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 2 150 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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