X-On Electronics has gained recognition as a prominent supplier of DTA123JET1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTA123JET1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTA123JET1G ON Semiconductor

DTA123JET1G electronic component of ON Semiconductor
DTA123JET1G ON Semiconductor
DTA123JET1G Bipolar Transistors - Pre-Biased
DTA123JET1G  Semiconductors

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See Product Specifications
Part No. DTA123JET1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Datasheet: DTA123JET1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8889: USD 0.0292 ea
Line Total: USD 259.56 
Availability - 11576
Ship by Fri. 25 Jul to Thu. 31 Jul
MOQ: 8889  Multiples: 1
Pack Size: 1
Availability Price Quantity
11576
Ship by Fri. 25 Jul to Thu. 31 Jul
MOQ : 8889
Multiples : 1
8889 : USD 0.0292
13246 : USD 0.0197

58
Ship by Fri. 01 Aug to Wed. 06 Aug
MOQ : 5
Multiples : 5
5 : USD 0.3772
50 : USD 0.2996
150 : USD 0.1998
500 : USD 0.1518
3000 : USD 0.1284
6000 : USD 0.1208

2283
Ship by Wed. 23 Jul to Fri. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2
10 : USD 0.1325
100 : USD 0.0804
500 : USD 0.0529
1000 : USD 0.0451
3000 : USD 0.0374
6000 : USD 0.0319
9000 : USD 0.0286
24000 : USD 0.0242

   
Manufacturer
Product Category
RoHS - XON
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
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Pd - Power Dissipation
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We are delighted to provide the DTA123JET1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA123JET1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Digital Transistors (BRT) R1 = 2.2 k , R2 = 47 k www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) contains a single transistor with a monolithic bias BASE network consisting of two resistors a series base resistor and a (INPUT) R2 baseemitter resistor. The BRT eliminates these individual PIN 2 components by integrating them into a single device. The use of a BRT EMITTER can reduce both system cost and board space. (GROUND) Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 Reduces Component Count XX M CASE 318D S and NSV Prefix for Automotive and Other Applications Requiring STYLE 1 Unique Site and Control Change Requirements AECQ101 1 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 XXX M Compliant CASE 318 STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 CollectorEmitter Voltage V 50 Vdc CEO 1 Collector Current Continuous I 100 mAdc C SC75 XX M CASE 463 Input Forward Voltage V 12 Vdc IN(fwd) STYLE 1 Input Reverse Voltage V 5 Vdc 1 IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: April, 2017 Rev. 5 DTA123J/DMUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2135T1G 6R SC59 3000 / Tape & Reel (PbFree) MMUN2135LT1G, ACA SOT23 3000 / Tape & Reel NSVMMUN2135LT1G* (PbFree) MUN5135T1G 6M SC70/SOT323 3000 / Tape & Reel (PbFree) DTA123JET1G 6M SC75 3000 / Tape & Reel (PbFree) DTA123JM3T5G, 6M SOT723 8000 / Tape & Reel NSVDTA123JM3T5G* (PbFree) NSBA123JF3T5G J (90)** SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable. **(XX) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 2 150 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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