DTC123EET1G ON Semiconductor

DTC123EET1G electronic component of ON Semiconductor
DTC123EET1G ON Semiconductor
DTC123EET1G Bipolar Transistors - Pre-Biased
DTC123EET1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DTC123EET1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC123EET1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. DTC123EET1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-416 T/R
Datasheet: DTC123EET1G Datasheet (PDF)
Price (USD)
1: USD 0.225 ea
Line Total: USD 0.22 
Availability : 7772
  
Ship by Fri. 08 Aug to Tue. 12 Aug
QtyUnit Price
1$ 0.225
10$ 0.1337
100$ 0.0804
500$ 0.0563
1000$ 0.0473
3000$ 0.0374
6000$ 0.0341
9000$ 0.0275
24000$ 0.0264

Availability 97
Ship by Tue. 19 Aug to Fri. 22 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.0956
50$ 0.0936
150$ 0.0922
500$ 0.0614


Availability 7772
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.225
10$ 0.1337
100$ 0.0804
500$ 0.0563
1000$ 0.0473
3000$ 0.0374
6000$ 0.0341
9000$ 0.0275
24000$ 0.0264

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTC123EET1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC123EET1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 k , R2 = 2.2 k www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) contains a single transistor with a monolithic bias BASE network consisting of two resistors a series base resistor and a base (INPUT) R2 emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER both system cost and board space. (GROUND) Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 Reduces Component Count XX M CASE 318D NSV Prefix for Automotive and Other Applications Requiring STYLE 1 Unique Site and Control Change Requirements AEC-Q101 Qualified 1 and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 Compliant XXX M CASE 318 STYLE 6 MAXIMUM RATINGS (T = 25C) A 1 Rating Symbol Max Unit SC70/SOT323 CollectorBase Voltage V 50 Vdc CBO XX M CASE 419 CollectorEmitter Voltage V 50 Vdc STYLE 3 CEO 1 Collector Current Continuous I 100 mAdc C SC75 Input Forward Voltage V 12 Vdc IN(fwd) CASE 463 XX M STYLE 1 Input Reverse Voltage V 10 Vdc IN(rev) 1 Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2016 Rev. 4 DTC123E/DMUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2231T1G 8H SC59 3000 / Tape & Reel (PbFree) MMUN2231LT1G, NSVMMUN2231LT1G* A8H SOT23 3000 / Tape & Reel (PbFree) MUN5231T1G 8H SC70/SOT323 3000 / Tape & Reel (PbFree) DTC123EET1G 8H SC75 3000 / Tape & Reel (PbFree) DTC123EM3T5G, NSVDTC123EM3T5G* 8H SOT723 8000 / Tape & Reel (PbFree) NSBC123EF3T5G E (180)** SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable. ** (xx) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 2 150 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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