ECH8102-TL-H ON Semiconductor

ECH8102-TL-H electronic component of ON Semiconductor
ECH8102-TL-H ON Semiconductor
ECH8102-TL-H Bipolar Transistors - BJT
ECH8102-TL-H  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ECH8102-TL-H Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ECH8102-TL-H Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ECH8102-TL-H
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT BIP PNP 12A 30V
Datasheet: ECH8102-TL-H Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1409
10$ 0.1326
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7436
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5094
10$ 0.7362
100$ 0.4153
500$ 0.3376
1000$ 0.2786
3000$ 0.2579
6000$ 0.2434
9000$ 0.2361
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2635
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.6217
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.6217
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2209
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ECH8102-TL-H from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ECH8102-TL-H and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : ENA1420A ECH8102 Bipolar Transistor ECH8102 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = -30V, I =0A -0.1 A CBO CB E Emitter Cutoff Current I V = -4V, I =0A -0.1 A EBO EB C Emitter Cutoff Current I V = -4.5V, I =0A -1 A ECO EC C h1V = -2V, I = -500mA 200 560 FE CE C DC Current Gain h2V = -2V, I = -4A 150 FE CE C h3V = -2V, I = -10A 100 FE CE C Gain-Bandwidth Product f V = -10V, I = -500mA 140 MHz T CE C Output Capacitance Cob V = -10V, f=1MHz 120 pF CB V (sat)1 I = -6A, I = -300mA -80 -135 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I = -2A, I = -40mA -50 -85 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = -2A, I = -40mA -0.85 -1.2 V BE C B Collector-to-Base Breakdown Voltage V I = -10A, I =0A -30 V (BR)CBO C E V I = -100A, R =0 -30 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I = -1mA, R = -30 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = -10A, I =0A -6 V (BR)EBO E C Turn-On Time t 91 ns on Storage Time t See speci ed Test Circuit. 125 ns stg Fall Time t 17 ns f Switching Time Test Circuit I B1 PW=20s V OUT D.C.1% I B2 INPUT R V B R R L 50 + + 100F 470F V =5V V = --12V BE CC I = --50I =25I = --5A C B1 B2 Ordering Information Device Package Shipping memo ECH8102-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1420-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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