Ordering number : ENA1182A ECH8308 P-Channel Power MOSFET ECH8308 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --12 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--12V, V =0V --10 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--6V, I =--1mA --0.4 --1.3 V GS DS D Forward Transfer Admittance yfs V =--6V, I =--4.5A 12 21 S DS D R (on)1 I =--4.5A, V =--4.5V 9.2 12.5 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--2A, V =--2.5V 14 20 m DS D GS R (on)3 I =--1A, V =--1.8V 22 33 m DS D GS Input Capacitance Ciss 2300 pF Output Capacitance Coss V =--6V, f=1MHz 720 pF DS Reverse Transfer Capacitance Crss 550 pF Turn-ON Delay Time t (on) 24 ns d Rise Time t 130 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 230 ns d Fall Time t 195 ns f Total Gate Charge Qg 26 nC Gate-to-Source Charge Qgs V =--6V, V =--4.5V, I =--10A 4.0 nC DS GS D Gate-to-Drain Miller Charge Qgd 7.1 nC Diode Forward Voltage V I =--10A, V =0V --0.79 --1.2 V SD S GS Switching Time Test Circuit V V = --6V DD IN 0V --4.5V I = --5A D V IN R =1.2 L D V OUT PW=10 s D.C.1% G ECH8308 P.G 50 S Ordering Information Device Package Shipping memo ECH8308-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1182-2/7