Product Information

EGP20A

EGP20A electronic component of ON Semiconductor

Datasheet
Rectifiers 2.0a Rectifier UF Recovery

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6312 ea
Line Total: USD 0.63

2986 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2986 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

EGP20A
ON Semiconductor

1 : USD 0.6118
10 : USD 0.5325
100 : USD 0.3772
500 : USD 0.3243
1000 : USD 0.2703
2000 : USD 0.2553
4000 : USD 0.2392

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Power Dissipation
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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High Efficiency Rectifiers 2.0 A Glass Passivated EGP20A - EGP20K Features GlassPassivated CavityFree Junction www.onsemi.com High Surge Current Capability Low Leakage Current SuperFast Recovery Time for High Efficiency Low Forward Voltage, High Current Capability ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted A AXIAL LEAD DO 204 Symbol Parameter Value Units CASE 017AJ I Average Rectified Current F(AV) 0.375 inch lead length at TA = 55C 2.0 A MARKING DIAGRAM I Peak Forward Surge Current FSM 8.3 ms single halfsinewave 75 A Superimposed on rated load EGP20K (JEDEC method) Y&Z&3 T , T Junction and Storage Temperature Range 65 to C J STG 150 EGP20K = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the Y = ON Semiconductor Logo device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. &Z = Assembly Code &3 = Date Code THERMAL CHARACTERISTICS Symbol Parameter Value Units P Total Device Dissipation 3.13 W D Derate above 25C 25 mWC R Thermal Resistance, Junction to Ambient 40 C/W JA R Thermal Resistance, Junction to Lead 15 C/W JL ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted A Device Parameter 20A 20B 20C 20D 20F 20G 20J 20K Units Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V Maximum RMS Voltage 35 70 105 140 210 280 420 560 V DC Reverse Voltage (Rated V ) 50 100 150 200 300 400 600 800 V R T = 25 C 5.0 A Maximum Reverse A Current at Rated V R T = 125 C 100 A A Maximum Reverse Recovery Time I = 0.5 A, I = 1.0 A, I = 0.25 A 50 75 nS F R rr Maximum Forward Voltage 2.0 A 0.95 1.25 1.7 V Typical Junction Capacitance 70 45 pF V = 4.0 V, f = 1.0 MHz R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: February, 2020 Rev. 1 EGP20K/DEGP20A EGP20K TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Forward Current Derating Curve Figure 2. NonRepetitive Surge Current Figure 3. Forward Characteristics Figure 4. Reserve Characteristics Figure 5. Junction Capacitance www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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