EMD4DXV6T1G ON Semiconductor

Hot EMD4DXV6T1G electronic component of ON Semiconductor
EMD4DXV6T1G ON Semiconductor
EMD4DXV6T1G Bipolar Transistors - Pre-Biased
EMD4DXV6T1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of EMD4DXV6T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMD4DXV6T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. EMD4DXV6T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased Dual Complementary NPN & PNP Digital
Datasheet: EMD4DXV6T1G Datasheet (PDF)
Price (USD)
3125: USD 0.0832 ea
Line Total: USD 260 
Availability : 77600
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
3125$ 0.0832
4475$ 0.0581

Availability 77600
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3125
Multiples : 1
QtyUnit Price
3125$ 0.0832
4475$ 0.0581


Availability 1455
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1359
Multiples : 1
QtyUnit Price
1359$ 0.1913
2153$ 0.1208
2174$ 0.1196
2348$ 0.1108
2555$ 0.1018
2798$ 0.0929
3096$ 0.084


Availability 7342
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4
10$ 0.2487
100$ 0.1572
500$ 0.11
1000$ 0.1001
2000$ 0.0891
4000$ 0.0726
8000$ 0.0649
24000$ 0.0627


Availability 13580
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 4412
Multiples : 1
QtyUnit Price
4412$ 0.0884
10000$ 0.0757
100000$ 0.0635


Availability 77600
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 4475
Multiples : 1
QtyUnit Price
4475$ 0.0581


Availability 62080
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 4412
Multiples : 1
QtyUnit Price
4412$ 0.0884
10000$ 0.0757
100000$ 0.0635


Availability 291000
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 4412
Multiples : 1
QtyUnit Price
4412$ 0.0884
10000$ 0.0757
100000$ 0.0635


Availability 98940
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 4412
Multiples : 1
QtyUnit Price
4412$ 0.0884
10000$ 0.0757
100000$ 0.0635


Availability 23280
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 4412
Multiples : 1
QtyUnit Price
4412$ 0.0884
10000$ 0.0757
100000$ 0.0635

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Qualification
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Number Of Channels
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMD4DXV6T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMD4DXV6T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMD4DXV6 Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network EMD4DXV6 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CB B CEO Emitter-Base Cutoff Current (V = 6.0, I = 5.0 mA) I 0.2 mAdc EB C EBO ON CHARACTERISTICS Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140 CE C FE CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C B CE(SAT) Output Voltage (on) (V = 5.0 V, V = 2.5 V, R = 1.0 k ) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc OH CC B L Input Resistor R1 7.0 10 13 k Resistor Ratio R1/R2 0.17 0.21 0.25 Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CB B CEO Emitter-Base Cutoff Current (V = 6.0, I = 0 mA) I 0.1 mAdc EB C EBO ON CHARACTERISTICS Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140 CE C FE CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C B CE(SAT) Output Voltage (on) (V = 5.0 V, V = 3.5 V, R = 1.0 k ) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc CC B L OH Input Resistor R1 32.9 47 61.1 k Resistor Ratio R1/R2 0.8 1.0 1.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 250 200 150 100 R = 833C/W JA 50 0 - 50 0 50 100 150 T , AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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