ESD11A3.3DT5G SERIES ESD Protection Diode Ultra Small SOT1123 Package The ESD11A Series is designed to protect voltage sensitive components from damage due to ESD. These parts provide excellent ESD clamping capability and fast response time to enhance the www.onsemi.com immunity of the end application from system level ESD stress such as IEC6100042. Two unidirectional surge protection diodes are housed 1 PIN 1. CATHODE in the ultra small SOT1123 package, making these parts ideal for ESD 3 2. CATHODE protection on designs where board space is at a premium, such as cell 3. ANODE 2 phones, MP3 players and many other portable handheld electronic devices. MARKING Specification Features: DIAGRAM Low Clamping Voltage Small Body Outline Dimensions: X M 0.039 x 0.024 (1.0 mm x 0.6 mm) SOT1123 Low Body Height: 0.016 (0.4 mm) CASE 524AA X = Specific Device Code Standoff Voltage: 3.3 V 5 V M = Date Code Low Leakage Response Time is Typically < 1 ns IEC6100042 Level 4 ESD Protection ORDERING INFORMATION AECQ101 Qualified and PPAP Capable Device Package Shipping These are PbFree Devices ESD11AxxDT5G SOT1123 8000/Tape & Reel Mechanical Characteristics: (PbFree) CASE: Void-free, transfer-molded, thermosetting plastic For information on tape and reel specifications, Epoxy Meets UL 94 V0 including part orientation and tape sizes, please LEAD FINISH: 100% Matte Sn (Tin) refer to our Tape and Reel Packaging Specifications MOUNTING POSITION: Any Brochure, BRD8011/D. QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements DEVICE MARKING INFORMATION See specific marking information in the device marking Table 1. MAXIMUM RATINGS column of the table on page 2 of this data sheet. Rating Symbol Value Unit IEC 6100042 (ESD) Contact 15 kV Total Power Dissipation on FR5 Board P 150 mW D (Note 1) T = 25C A Storage Temperature Range T 55 to +150 C stg Junction Temperature Range T 55 to +125 C J Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of ESD maximum ratings. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: March, 2019 Rev. 5 ESD11A3.3D/DESD11A3.3DT5G SERIES Table 2. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage V V V RWM C BR RWM V I V R F I Maximum Reverse Leakage Current V R RWM I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional C Capacitance V = 0 and f = 1 MHz R Table 3. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 0.9 V Max. I = 10 mA for all types) A F F V (V) C (pF), V (V) V (V) BR C C V I ( A) I unidirectional I = 1 A IEC6100042 RWM R T PP (V) V (Note 2) I (Note 3) (Note 5) (Note 6) RWM T Device Marking Max Max Min mA Typ Max Max Typ Device ESD11A3.3DT5G 2* 3.3 1.0 5.2 1.0 25 35 7.8 Figures 1 thru 4 ESD11A5.0DT5G 3* 5.0 0.1 6.2 1.0 20 30 9.5 Figures 1 thru 4 *Rotated 90 clockwise. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Unidirectional capacitance at f = 1 MHz, V = 0 V, T = 25C (pin1 to pin 3 pin 2 to pin 3). R A 4. Bidirectional capacitance at f = 1 MHz, V = 0 V, T = 25C (pin1 to pin 2). R A 5. Surge current waveform per Figure 7. 6. Typical waveform. For test procedure see Figures 5 and 6 and Application Note AND8307/D. www.onsemi.com 2