ESD7004, SZESD7004 SD Protection Diode Low Capacitance ESD Protection Diode for High Speed Data Line The ESD7004 surge protection is designed to protect high speed www.onsemi.com data lines from ESD. Ultralow capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage MARKING sensitive high speed data lines. The flowthrough style package DIAGRAM allows for easy PCB layout and matched trace lengths necessary to maintain consistent impedance between high speed differential lines UDFN10 4M M such as USB 3.0 and HDMI. CASE 517BB Features 4M = Specific Device Code (tbd) Low Capacitance (0.4 pF Typical, I/O to GND) M = Date Code Protection for the Following IEC Standards: = PbFree Package IEC 6100042 (Level 4) (Note: Microdot may be in either location) Low ESD Clamping Voltage SZ Prefix for Automotive and Other Applications Requiring Unique PIN CONFIGURATION Site and Control Change Requirements AECQ101 Qualified and AND SCHEMATIC PPAP Capable N/C N/C GND N/C N/C This is a PbFree Device 10 98 7 6 Typical Applications USB 3.0 1423 5 HDMI I/O I/O GND I/O I/O Display Port eSATA Pin 1 Pin 2 Pin 4 Pin 5 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Pins 3, 8 Lead Solder Temperature T 260 C L Maximum (10 Seconds) IEC 6100042 Contact (ESD) ESD 15 kV = IEC 6100042 Air (ESD) ESD 15 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping ESD7004MUTAG UDFN10 3000 / (PbFree) Tape & Reel See Application Note AND8308/D for further description of SZESD7004MUTAG UDFN10 3000 / survivability specs. (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2017 Rev. 5 ESD7004/DESD7004, SZESD7004 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 5.0 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 5.5 V BR T Reverse Leakage Current I V = 5 V, I/O Pin to GND 1.0 A R RWM Clamping Voltage (Note 1) V I = 1 A, I/O Pin to GND (8 x 20 s pulse) 10 V C PP Clamping Voltage (Note 2) V IEC6100042, 8 KV Contact See Figures 1 and 2 V C Clamping Voltage V I = 8 A 11.4 C PP TLP (Note 3) I = 16 A 15.6 PP See Figures 6 through 9 I = 8 A 4.5 PP I = 16 A 8.1 PP Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins 0.2 0.3 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.4 0.5 pF J R 1. Surge current waveform per Figure 5. 2. For test procedure see Figures 3 and 4 and application note AND8307/D. 3. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 Figure 1. IEC61000 42 +8 KV Contact ESD Figure 2. IEC6100042 8 KV Contact Clamping Voltage Clamping Voltage www.onsemi.com 2