ESD7361, SZESD7361 ESD Protection Diode Low Capacitance ESD Protection Diode for High Speed Data Line The ESD7361 Series ESD protection diodes are designed to protect www.onsemi.com high speed data lines from ESD. Ultralow capacitance make this device an ideal solution for protecting voltage sensitive high speed MARKING data lines. DIAGRAMS Features Low Capacitance (0.55 pF Max, I/O to GND) 2 SOD323 Protection for the Following IEC Standards: 7H CASE 477 M IEC6100042 (ESD): Level 4 15 kV Contact 1 IEC6100044 (EFT): 40 A 5/50 ns IEC6100045 (Lightning): 1 A (8/20 s) 2 SOD523 7X ISO 10605 (ESD) 330 pF/2 k 15 kV Contact CASE 502 12 SZ Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOD923 2 M These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 514AB Compliant Typical Applications X, XX = Specific Device Code M = Date Code Wireless Charger Near Field Communications PIN CONFIGURATION MAXIMUM RATINGS (T = 25C unless otherwise noted) J AND SCHEMATIC Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +125 C J 1 2 Storage Temperature Range T 55 to +150 C stg Cathode Anode Lead Solder Temperature T 260 C L Maximum (10 Seconds) IEC 6100042 Contact (ESD) ESD 15 kV ORDERING INFORMATION IEC 6100042 Air (ESD) ESD 15 kV See detailed ordering and shipping information on page 6 of ISO 10605 330 pF/2 k Contact (ESD) ESD 15 kV this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2018 Rev. 5 ESD7361/D MESD7361, SZESD7361 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 5 16 V RWM Breakdown Voltage V I = 1 mA pin 1 to pin 2 16.5 V BR T Reverse Leakage Current I V = 5.0 V <1 1000 nA R RWM V = 15 V 20 1000 nA RWM Clamping Voltage (Note 2) V I = 8 A 31 V C PP Clamping Voltage (Note 2) V I = 16 A 34 V C PP Junction Capacitance C V = 0 V, f = 1 MHz 0.55 pF J R V = 0 V, f < 1 GHz 0.55 R Dynamic Resistance R TLP Pulse 0.735 DYN Insertion Loss f = 1 MHz 0.01 dB f = 5 GHz 2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For test procedure see Figures 9 and 10 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 1.E03 1 1.E04 1.E05 0.8 1.E06 1.E07 0.6 1.E08 1.E09 0.4 1.E10 1.E11 0.2 1.E12 1.E13 0 618 012 0 5 10 15 20 25 30 042 14 16 18 VOLTAGE (V) V (V) Bias Figure 1. Typical IV Characteristics Figure 2. Typical CV Characteristics www.onsemi.com 2 CURRENT (A) CAPACITANCE (pF)