ESD7M5.0DT5G ESD Protection Diode UltraLow Capacitance The ESD7M5.0DT5G is designed to protect voltage sensitive components from damage due to ESD in applications that require ultra www.onsemi.com low capacitance to preserve signal integrity. Excellent clamping capability, low leakage and fast response time are combined with an ultra low diode capacitance of 2.5 pF to provide best in class 1 PIN 1. CATHODE protection from IC damage due to ESD. The ultra small SOT723 3 2. CATHODE package is ideal for designs where board space is at a premium. The 3. ANODE 2 ESD7M5.0DT5G can be used to protect two unidirectional lines or one bidirectional line. When used to protect one bidirectional line, the effective capacitance is 1.25 pF. Because of its low capacitance, it is well suited for protecting high frequency signal lines such as USB2.0 high speed and antenna line applications. Specification Features: SOT723 Low Capacitance 2.5 pF Max CASE 631AA Low Clamping Voltage Small Body Outline Dimensions: 0.047 x 0.047 (1.20 mm x 1.20 mm) MARKING DIAGRAM Low Body Height: 0.020 (0.5 mm) Standoff Voltage: 5 V Low Leakage L7 M Response Time is Typically < 1.0 ns 1 IEC6100042 Level 4 ESD Protection This is a PbFree Device L7 = Specific Device Code M = Date Code Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V0 ORDERING INFORMATION LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any Device Package Shipping QUALIFIED MAX REFLOW TEMPERATURE: 260C ESD7M5.0DT5G SOT723 8000/Tape & Reel Device Meets MSL 1 Requirements (PbFree) For information on tape and reel specifications, MAXIMUM RATINGS including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Rating Symbol Value Unit Brochure, BRD8011/D. IEC 6100042 (ESD) Contact 10 kV Total Power Dissipation on FR5 Board P 150 mW D DEVICE MARKING INFORMATION (Note 1) T = 25C A See specific marking information in the device marking column of the Electrical Characteristics tables starting on Storage Temperature Range T 55 to +150 C stg page 2 of this data sheet. Junction Temperature Range T 55 to +125 C J Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2018 Rev. 6 ESD7M5.0D/DESD7M5.0DT5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional C Capacitance V = 0 and f = 1.0 MHz R ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.1 V Max. I = 10 mA for all types) A F F V (V) C (pF), C (pF), V (V) BR C V I ( A) I unidirectional bidirectional I = 1 A RWM R T PP (V) V (Note 2) (Note 3) (Note 4) (Note 5) I V RWM T C Per IEC61000 Device 42 Marking Max Max Min mA Max Max Max (Note 6) Device ESD7M5.0DT5G L7 5.0 1.0 5.4 1.0 2.5 1.25 10.4 Figures 1 and 2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Unidirectional capacitance at f = 1 MHz, V = 0 V, T = 25C (pin1 to pin 3 pin 2 to pin 3). R A 4. Bidirectional capacitance at f = 1 MHz, V = 0 V, T = 25C (pin1 to pin 2). R A 5. Surge current waveform per Figure 5. 6. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 6100042 Negative 8 kV contact per IEC 6100042 www.onsemi.com 2