Product Information

ESDR0502BT1G

ESDR0502BT1G electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes TWO CHANNEL LOW CAP ESD

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1434 ea
Line Total: USD 0.14

764 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
764 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

ESDR0502BT1G
ON Semiconductor

1 : USD 0.1434
10 : USD 0.1419
25 : USD 0.0825
100 : USD 0.0808
250 : USD 0.0808
500 : USD 0.0808

764 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 93
Multiples : 1

Stock Image

ESDR0502BT1G
ON Semiconductor

93 : USD 0.0825
100 : USD 0.0808

     
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif

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ESDR0502B, SZESDR0502B ESD Protection Diode UltraLow Capacitance The ESDR0502B is designed to protect voltage sensitive components from damage due to ESD in applications that require ultra low capacitance to preserve signal integrity. Excellent clamping capability, low leakage and fast response time are combined with an ultra low diode capacitance of 0.5 pF to provide best in class www.onsemi.com protection from IC damage due to ESD. The small SC75 package is ideal for designs where board space is at a premium. The ESDR0502B can be used to protect two unidirectional lines or one bidirectional 1 PIN 1. CATHODE 3 line. When used to protect one bidirectional line, the effective 2. CATHODE 3. ANODE 2 capacitance is 0.25 pF. Because of its low capacitance, it is well suited for protecting high frequency signal lines such as USB2.0 high speed and antenna line applications. Specification Features: MARKING Low Capacitance 0.5 pF Typical DIAGRAM Low Clamping Voltage, Low Leakage 3 Small Body Outline Dimensions: SC75 AD M 0.063 x 0.063 (1.60 mm x 1.60 mm) CASE 463 2 STYLE 4 Standoff Voltage: 5 V 1 1 Response Time is Typically < 1.0 ns IEC6100042 Level 4 ESD Protection AD = Device Code ISO10605 330 pF/2 k 17 kV (Contact) M = Date Code* SZ Prefix for Automotive and Other Applications Requiring Unique = PbFree Package Site and Control Change Requirements AECQ101 Qualified and (Note: Microdot may be in either location) PPAP Capable *Date Code orientation may vary depending This is a PbFree Device upon manufacturing location. Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V0 ORDERING INFORMATION LEAD FINISH: 100% Matte Sn (Tin) Device Package Shipping MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260C ESDR0502BT1G SC75 3000/Tape & Device Meets MSL 1 Requirements (PbFree) Reel MAXIMUM RATINGS SZESDR0502BT1G SC75 3000/Tape & (PbFree) Reel Rating Symbol Value Unit IEC 6100042 Contact (ESD) ESD 11 kV For information on tape and reel specifications, IEC 6100042 Air (ESD) 15 including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Peak Surge Power (8 x 20 s) P 20 W pk Brochure, BRD8011/D. Peak Surge Current (8 x 20 s) I 2.0 A pp Total Power Dissipation on FR5 Board P 150 mW D See Application Note AND8308/D for further (Note 1) T = 25C A description of survivability specs. Storage Temperature Range T 55 to +150 C stg Junction Temperature Range T 55 to +150 C J Lead Solder Temperature Maximum T 260 C DEVICE MARKING INFORMATION L (10 Second Duration) See specific marking information in the device marking column of the Electrical Characteristics tables starting on Stresses exceeding those listed in the Maximum Ratings table may damage the page 2 of this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2017 Rev. 5 ESDR0502B/DESDR0502B, SZESDR0502B ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional C Capacitance V = 0 and f = 1.0 MHz R ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.1 V Max. I = 10 mA for all types) A F F V (V) C (pF), C (pF), V (V) BR C V I ( A) I unidirectional bidirectional I = 1 A RWM R T PP (V) V (Note 2) (Note 3) (Note 4) (Note 5) I V RWM T C Per IEC61000 Device 42 Marking Max Max Min mA Typ Max Typ Max Max (Note 6) Device* ESDR0502B AD 5.0 1.0 5.8 1.0 0.5 0.9 0.25 0.45 15 Figures 1 and 2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Include SZprefix devices where applicable. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Unidirectional capacitance at f = 1 MHz, V = 0 V, T = 25C (pin1 to pin 3 pin 2 to pin 3). R A 4. Bidirectional capacitance at f = 1 MHz, V = 0 V, T = 25C (pin1 to pin 2). R A 5. Surge current waveform per Figure 5. 6. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 6100042 Negative 8 kV contact per IEC 6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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