X-On Electronics has gained recognition as a prominent supplier of FCB110N65F MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCB110N65F MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCB110N65F ON Semiconductor

FCB110N65F electronic component of ON Semiconductor
FCB110N65F ON Semiconductor
FCB110N65F MOSFETs
FCB110N65F  Semiconductors

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See Product Specifications
Part No. FCB110N65F
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET
Datasheet: FCB110N65F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 3.9565 ea
Line Total: USD 3165.2 
Availability - 0
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 120
Multiples : 1
120 : USD 2.5694

0
Ship by Fri. 16 May to Wed. 21 May
MOQ : 24
Multiples : 1
24 : USD 4.9856

0
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 8.0382
10 : USD 5.2644
25 : USD 4.9736
100 : USD 4.3118
500 : USD 3.67
800 : USD 3.1085

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 2
Multiples : 1
2 : USD 5.6254
10 : USD 4.6262
25 : USD 4.1212

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 2
Multiples : 1
2 : USD 5.6668
10 : USD 5.2187
25 : USD 4.252

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 2
Multiples : 2
2 : USD 5.6668
10 : USD 5.2187
25 : USD 4.252

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 800
Multiples : 800
800 : USD 3.9565

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 12
Multiples : 1
12 : USD 5.6017
14 : USD 4.8087
25 : USD 4.3914

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the FCB110N65F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCB110N65F and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCB110N65F N-Channel SuperFET II FRFET MOSFET August 2016 FCB110N65F N-Channel SuperFET II FRFET MOSFET 650 V, 35 A, 110 m Features Description 700 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 96 m (Typ.) DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 98 nC) and lower gate charge performance. g SuperFET II FRFET MOSFET combines a faster and more Low Effective Output Capacitance (Typ. C = 464 pF) oss(eff.) rugged intrinsic body diode performance with fast switching, 100% Avalanche Tested aimed at achieving better reliability and efficiency especially in resonant switching applications. RoHS Compliant SuperFET II FRFET is very suitable for the switching power Applications applications such as server/telecom power, Solar inverter, FPD TV power, computing power, lighting and industrial power appli- Telecom/Server Power Supplies Solar Inverters cations. Computing Power Supplies FPD TV Power/Lighting D D G G 2 S D -PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCB110N65F Unit V Drain to Source Voltage 650 V DSS - DC 20 V Gate to Source Voltage V GSS - AC 30 o - Continuous (T = 25 C) 35 C I Drain Current A D o - Continuous (T = 100 C) 24 C I Drain Current - Pulsed (Note 1) 105 A DM E Single Pulsed Avalanche Energy (Note 2) 809 mJ AS I Avalanche Current (Note 1) 8 A AR E Repetitive Avalanche Energy (Note 1) 3.57 mJ AR MOSFET dv/dt (Note 3) 100 dv/dt V/ns Peak Diode Recovery dv/dt 50 o (T = 25 C) 357 W C P Power Dissipation D o o - Derate Above 25C2.86W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter Unit FCB110N65F R Thermal Resistance, Junction to Case 0.35 JC o Thermal Resistance, Junction to Ambient (Mimimum Pad of 2-oz copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz copper), Max. 40 1 www.fairchildsemi.com 2015 Fairchild Semiconductor Corporation FCB110N65F Rev. 1.1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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