ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FCD5N60-F085 N-Channel SuperFET MOSFET FCD5N60-F085 N-Channel SuperFET MOSFET 600 V, 4.6 A, 1.1 Features 600V, 4.6A, typ. R =860m V =10V ds(on) GS D Ultra Low Gate Charge (Typ. Q = 16 nC) g UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive On Board Charger D-PAK TO-252 S (TO-252) Automotive DC/DC Converter for HEV Description SuperFETTM is ON Semiconductor proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is suitable for various automotive DC/DC power conversion. MOSFET Maximum Ratings T = 25C unless otherwise noted. J Symbol Parameter Ratings Units V Drain-to-Source Voltage 600 V DSS V Gate-to-Source Voltage 30 V GS Drain Current - Continuous (V =10) (Note 1) T = 25C 4.6 GS C I A D Pulsed Drain Current T = 25C See Figure 4 C E Single Pulse Avalanche Energy (Note 1) 29 mJ AS Power Dissipation 54 W P D o o Derate Above 25C1.56W/ C o T , T Operating and Storage Temperature -55 to + 150 C J STG o R Thermal Resistance, Junction to Case 2.3 C/W JC o R Maximum Thermal Resistance, Junction to Ambient (Note 2) 83 C/W JA Notes: 1: Starting T = 25C, L = 10mH, I = 2.4A, V = 100V during inductor charging and V = 0V during time in avalanche. J AS DD DD 2: R is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCD5N60 FCD5N60-F085 D-PAK(TO-252) 13 16mm 2500units 2015 Semiconductor Components Industries, LLC. Publication Order Number: August-2017, Rev. 2 FCD5N60-F085/D