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V = 10 V, I = 22 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 47 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche en- Low C (Typ. 60 pF) rss ergy strength. This device family is suitable for switching power 100% Avalanche Tested converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- Applications lasts. PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FDB44N25 Unit V Drain-Source Voltage 250 V DSS I Drain Current - Continuous (T = 25C) 44 A D C - Continuous (T = 100C) 26.4 A C (Note 1) I Drain Current - Pulsed 176 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 2055 mJ AS (Note 1) I Avalanche Current 44 A AR (Note 1) E Repetitive Avalanche Energy 30.7 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 307 W D C - Derate Above 25C 2.45 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter FDB44N25 Unit R Thermal Resistance, Junction-to-Case, Max. 0.41 JC 2 R Thermal Resistance, Junction-to-Ambient (1 in Pad of 2-oz Copepr), Max. 40 C/W JA R Thermal Resistance, Junction-to-Ambien (Minimum Pad of 2-oz Copper), Max. 62.5 JA 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDB44N25 Rev. C1