X-On Electronics has gained recognition as a prominent supplier of FDC5614P MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDC5614P MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDC5614P ON Semiconductor

FDC5614P electronic component of ON Semiconductor
FDC5614P ON Semiconductor
FDC5614P MOSFETs
FDC5614P  Semiconductors

Images are for reference only
See Product Specifications
Part No. FDC5614P
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Datasheet: FDC5614P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.5996 ea
Line Total: USD 3 
Availability - 2997
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
37830
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.2427
6000 : USD 0.2303
9000 : USD 0.2269
12000 : USD 0.2234
27000 : USD 0.2201
51000 : USD 0.2167
102000 : USD 0.2135

378300
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 667
Multiples : 1
667 : USD 0.39
750 : USD 0.3471
897 : USD 0.2899
957 : USD 0.2717
1031 : USD 0.2522
3000 : USD 0.2213
6000 : USD 0.2187
9000 : USD 0.2063

11640
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.2546
6000 : USD 0.2389
9000 : USD 0.2235

2151
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 589
Multiples : 1
589 : USD 0.442
592 : USD 0.4394
596 : USD 0.4368
599 : USD 0.4342
603 : USD 0.4316
607 : USD 0.429
1000 : USD 0.41

81480
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.25
6000 : USD 0.2487
9000 : USD 0.2463
12000 : USD 0.245
15000 : USD 0.2412

2997
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ : 5
Multiples : 5
5 : USD 0.5996
50 : USD 0.3582
150 : USD 0.287
500 : USD 0.243
3000 : USD 0.2234
6000 : USD 0.2116

2387
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 0.84
10 : USD 0.6622
50 : USD 0.4998
58 : USD 0.3262
160 : USD 0.308
750 : USD 0.3024
1000 : USD 0.2968

11640
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.2546
6000 : USD 0.2389
9000 : USD 0.2235

49470
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.2641
6000 : USD 0.2475
9000 : USD 0.2334

2151
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 596
Multiples : 1
596 : USD 0.4368

378300
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 750
Multiples : 1
750 : USD 0.3471

37830
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.2856
6000 : USD 0.2709
9000 : USD 0.2669
12000 : USD 0.2628
27000 : USD 0.259

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Package
Features Of Semiconductor Devices
Type Of Transistor
Gate-Source Voltage
Drain-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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We are delighted to provide the FDC5614P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDC5614P and other electronic components in the MOSFETs category and beyond.

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The FDC5614P is a -60V N-channel SuperSOT-6 enhancement-mode Field-Effect Transistor (FET) manufactured by ON Semiconductor. This part uses an unipolar P-type Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology to allow current flow between its Drain and Source terminals. It has a maximum continuous Drain-Source Voltage of -60V, and a maximum continuous Drain Current of -3A. The Power Dissipation (PD) of the device is 1.6W. This part is available in the SuperSOT-6 package type, which has a height of 1.10mm, a length of 2.90mm, and a width of 2.90mm.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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