FDC654P ON Semiconductor

FDC654P electronic component of ON Semiconductor
FDC654P ON Semiconductor
FDC654P MOSFETs
FDC654P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDC654P MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDC654P MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.FDC654P
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:MOSFET SSOT-6 P-CH -30V
Datasheet:FDC654P Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 0.2206 ea
Line Total: USD 0.22 
Availability : 0
  
QtyUnit Price
1$ 0.2206
10$ 0.1952
30$ 0.1838
100$ 0.1696
500$ 0.1103
1000$ 0.1083
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1218
6000$ 0.1204
9000$ 0.1197
12000$ 0.119
15000$ 0.1169


Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2206
10$ 0.1952
30$ 0.1838
100$ 0.1696
500$ 0.1103
1000$ 0.1083


Availability0
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8975
10$ 0.5562
100$ 0.3312
500$ 0.2475
1000$ 0.2266
3000$ 0.1881
6000$ 0.176
24000$ 0.1694


Availability0
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 0.502
25$ 0.404
59$ 0.294
163$ 0.2774


Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1849


Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3727

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
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Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
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Series
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
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Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDC654P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDC654P and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC654P FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using ON Semiconductors advanced PowerTrench process. It has been optimized for Features battery power management applications. 3.6 A, 30 V. R = 75 m V = 10 V DS(ON) GS R = 125 m V = 4.5 V DS(ON) GS Applications Low gate charge (6.2 nC typical) Battery management Load switch High performance trench technology for extremely Battery protection low R DS(ON) S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1a) 3.6 A D Pulsed 10 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 30 C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .654 FDC654P 7 8mm 3000 units Publication Order Number: 2003 Semiconductor Components Industries, LLC. FDC654P /D October-2017, Rev. 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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