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FDD8424H Dual N & P-Channel PowerTrench MOSFET March 2015 FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m P-Channel: -40V, -20A, 54m Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max r = 24m at V = 10V, I = 9.0A DS(on) GS D advanced PowerTrench- process that has been especially Max r = 30m at V = 4.5V, I = 7.0A DS(on) GS D tailored to minimize on-state resistance and yet maintain superior switching performance. Q2: P-Channel Max r = 54m at V = -10V, I = -6.5A DS(on) GS D Application Max r = 70m at V = -4.5V, I = -5.6A DS(on) GS D Inverter Fast switching speed H-Bridge RoHS Compliant D1 D2 D1/D2 G1 G2 G2 S2 G1 S1 S1 S2 Dual DPAK 4L N-Channel P-Channel MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 40 -40 V DS V Gate to Source Voltage 20 20 V GS Drain Current - Continuous (Package Limited) 20 -20 - Continuous (Silicon Limited) T = 25C 26 -20 C I A D - Continuous T = 25C 9.0 -6.5 A - Pulsed 55 -40 Power Dissipation for Single Operation T = 25C (Note 1) 30 35 C P T = 25C (Note 1a) 3.1 W D A T = 25C (Note 1b) 1.3 A E Single Pulse Avalanche Energy (Note 3) 29 33 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 4.1 JC C/W R Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.5 JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8424H FDD8424H TO-252-4L 13 16mm 2500 units 1 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FDD8424H Rev.1.5