MOSFET N-Channel, POWERTRENCH 80 V, 100 A, 4.2 m FDD86367 Features www.onsemi.com Typical R = 3.3 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 68 nC at V = 10 V, I = 80 A g(tot) GS D D UIS Capability This Device is PbFree, Halogen Free/BFR Free and is RoHS Compliant G Applications PowerTrain Management S Solenoid and Motor Drivers NChannel Integrated Starter/Alternator Primary Switch for 12 V Systems D G MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Symbol Parameter Ratings Unit S VDSS DraintoSource Voltage 80 V DPAK3 (TO252 3 LD) VGS GatetoSource Voltage 20 V CASE 369AS I Drain Current Continuous (V = 10) 100 A D GS (Note 1) T = 25C MARKING DIAGRAM C Pulsed Drain Current T = 25C See Figure 4 C EAS Single Pulse Avalanche Energy (Note 2) 82 mJ Y&Z&3&K P Power Dissipation 227 W FDD D 86367 Derate Above 25C 1.52 W/C T , T Operating and Storage Temperature 55 to + 175 C J STG FDD86367 = Specific Device Code R Thermal Resistance, Junction to Case 0.66 C/W JC Y = ON Semiconductor Logo R Maximum Thermal Resistance, 52 C/W &Z = Assembly Plant Code JA Junction to Ambient (Note 3) &3 = 3Digit Date Code &K = 2Digits Lot Run Traceability Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Current is limited by bondwire configuration. See detailed ordering and shipping information on page 2 of 2. Starting T = 25C, L = 40 H, I = 64 A, V = 80 V during inductor charging J AS DD this data sheet. and V = 0V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design, while R qJC JA is determined by the board design. The maximum rating presented here is 2 based on mounting on a 1 in pad of 2oz copper. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2020 Rev. 2 FDD86367/DFDD86367 PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Shipping FDD86367 FDD86367 DPAK3 (TO252 3 LD) 13 16 mm 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Condition Min Typ Max Unit OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 80 V VDSS D GS I DraintoSource Leakage Current V = 80 V, T = 25C 1 mA DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2 3 4 V GS(th) GS DS D R Drain to Source On Resistance I = 80 A, T = 25C 3.3 4.2 m DS(on) D J V = 10 V GS T = 175C (Note 4) 6.6 8.4 m J DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1 MHz 4840 pF DS GS iss C Output Capacitance 814 pF oss C Reverse Transfer Capacitance 31 pF rss R Gate Resistance V = 0.5 V, f = 1 MHz 2.3 g GS Q Total Gate Charge V = 0 to 10 V V = 40 V, 68 88 nC g(ToT) GS DD I = 80 A D Q Threshold Gate Charge V = 0 to 2 V 8.8 nC g(th) GS Q GatetoSource Gate Charge V = 40 V, I = 80 A 22 nC gs DD D Q GatetoDrain Miller Charge 14 nC gd SWITCHING CHARACTERISTICS t TurnOn Time V = 40 V, I = 80 A, V = 10 V, 104 ns on DD D GS R = 6 GEN t TurnOn Delay 20 ns d(on) t Rise Time 49 ns r t TurnOff Delay 36 ns d(off) t Fall Time 16 ns f t TurnOff Time 80 ns off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage I = 80 A, V = 0 V 1.3 V SD SD GS I = 40 A, V = 0 V 1.2 V SD GS t ReverseRecovery Time V = 64 V, I = 80 A, dI /dt = 100 A/ s 68 102 ns rr DD F SD Q ReverseRecovery Charge 66 106 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2