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The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 70 V RRM I Average Rectified Forward Current 200 mA F(AV) Pulse Width = 1.0 s 1.0 A I Non-repetitive Peak Forward Current FSM Pulse Width = 1.0 s4.0 A T Storage Temperature Range -65 to +200 C STG T Operating Junction Temperature 175 C J Note: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Measured on 8.3ms single half-sine wave or equivalent square wave. Duty cycle = 4 pulses per minute maximum. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 350 C JA Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Max. Units V Breakdown Voltage I = 100 A85 V R R I = 10 mA 1.0 V F V Forward Voltage F I = 100 mA 1.0 V F V = 60 V 25 nA R I Reverse Leakage R V = 60 V, T = 150C5.0 A R A C Total Capacitance V = 0, f = 1.0 MHz 6.0 pF T R 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N457A / FDLL457A Rev. 1.1.0 1