X-On Electronics has gained recognition as a prominent supplier of FDMC7672S mosfet across the USA, India, Europe, Australia, and various other global locations. FDMC7672S mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

FDMC7672S ON Semiconductor

FDMC7672S electronic component of ON Semiconductor
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See Product Specifications
Part No.FDMC7672S
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET 30V/20A N-Chan PowerTrench SyncFET
Datasheet: FDMC7672S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.3784 ea
Line Total: USD 1135.2

Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.5438
6000 : USD 0.5235
9000 : USD 0.514
15000 : USD 0.5044
24000 : USD 0.5036

0 - WHS 2


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.5873
6000 : USD 0.5437
9000 : USD 0.5437

0 - WHS 3


Ships to you between Fri. 14 Jun to Tue. 18 Jun

MOQ : 1
Multiples : 1
1 : USD 2.7247
10 : USD 1.0173
100 : USD 0.7619
500 : USD 0.6293
1000 : USD 0.4969
3000 : USD 0.4659

0 - WHS 4


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0906
5 : USD 0.9086
24 : USD 0.672
66 : USD 0.644

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the FDMC7672S from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMC7672S and other electronic components in the MOSFET category and beyond.

ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. TM FDMC7672S N-Channel Power Trench SyncFET FDMC7672S TM N-Channel Power Trench SyncFET 30 V, 14.8 A, 6.0 m Features General Description Max r = 6.0 m at V = 10 V, I = 14.8 A This FDMC7672S is produced using ON Semiconductors DS(on) GS D advanced Power Trench process that has been especially Max r = 7.1 m at V = 4.5 V, I = 12.4 A DS(on) GS D tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications High performance technology for extremely low r DS(on) common in Notebook Computers and Portable Battery packs. Termination is Lead-free and RoHS Compliant Applications DC - DC Buck Converters Notebook battery power mangement Load switch in Notebook Bottom Top G D 5 4 Pin 1 G S S D 6 3 S S S D 7 2 D D S D 8 1 D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 18 C I -Continuous T = 25 C (Note 1a) 14.8 A D A -Pulsed 45 E Single Pulse Avalanche Energy (Note 3) 60 mJ AS Power Dissipation T = 25 C 36 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.5 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 53 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7672S FDMC7672S MLP 3.3X3.3 13 12 mm 3000 units 1 2010 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev.3 FDMC7672S/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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