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FDMC86259P P-Channel PowerTrench MOSFET February 2014 FDMC86259P P-Channel PowerTrench MOSFET -150 V, -13 A, 107 m Features General Description Max r = 107 m at V = -10 V, I = -3 A This P-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process that has Max r = 137 m at V = -6 V, I = -2.7 A DS(on) GS D been especially tailored to minimize the on-state resistance and Very low RDS-on mid voltage P channel silicon technology yet maintain superior switching performance. optimised for low Qg This product is optimised for fast switching applications as Applications well as load switch applications Active Clamp Switch 100% UIL Tested Load Switch RoHS Compliant Pin 1 Pin 1 S S S D S G S D S D D D D D G D Top Bottom Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -150 V DS V Gate to Source Voltage 25 V GS Drain Current -Continuous T = 25 C -13 C I -Continuous T = 25 C (Note 1a) -3.2 A D A -Pulsed -20 E Single Pulse Avalanche Energy (Note 3) 181 mJ AS Power Dissipation T = 25 C 62 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to + 150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.0 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86259P FDMC86259P Power 33 13 12 mm 3000 units 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC86259P Rev.C