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FDMC86340ET80 N-Channel Shielded Gate Power Trench MOSFET January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench MOSFET 80 V, 68 A, 6.5 m Features General Description Extended T rating to 175C This N-Channel MOSFET is produced using Fairchild J Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max r = 6.5 m at V = 10 V, I = 14 A optimized for the on-state resistance and yet maintain superior DS(on) GS D switching performance. Max r = 8.5 m at V = 8 V, I = 12 A DS(on) GS D Application High performance technology for extremely low r DS(on) DC-DC Conversion Termination is Lead-free RoHS Compliant Pin 1 Pin 1 S S S D S G S D S D D D D D G D Top Bottom Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 68 C -Continuous T = 100 C (Note 5) 48 C I A D -Continuous T = 25 C (Note 1a) 14 A -Pulsed (Note 4) 316 E Single Pulse Avalanche Energy (Note 3) 216 mJ AS Power Dissipation T = 25 C 65 C P W D Power Dissipation T = 25 C (Note 1a) 2.8 A T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 2.3 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86340ET FDMC86340ET80 Power33 13 12 mm 3000 units 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC86340ET80 Rev. 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