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V = 10 V, I = 50 A DS(on) GS D Semiconductors advance PowerTrench process that has Low FOM R *Q DS(on) G been tailored to minimize the on-state resistance while main- Low Reverse Recovery Charge, Q = 80 nC rr taining superior switching performance. Soft Reverse Recovery Body Diode Enables Highly Efficiency in Synchronous Rectification Applications Fast Switching Speed Synchronous Rectification for ATX / Server / Telecom PSU 100% UIL Tested Battery Protection circuit RoHS Compliant DC Motor Drives and Uninterruptible Power Supplies Top Bottom Pin 1 S G D 5 4 S S G S D 6 3 D 7 S 2 D D 1 S D D 8 D Power 56 o MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter FDMS037N08B Unit V Drain to Source Voltage 75 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C) 100 C o I Drain Current - Continuous (T = 25 C, Silicon Limited) 128 A D C o - Continuous (T = 25 C) (Note 1a) 19.9 A I Drain Current - Pulsed (Note 2) 400 A DM E Single Pulsed Avalanche Energy (Note 3) 180.6 mJ AS o (T = 25 C) 104.2 W C P Power Dissipation D o (T = 25 C) (Note 1a) 0.83 W A o T , T Operating and Storage Temperature Range -55 to +150 C J STG Thermal Characteristics Symbol Parameter FDMS037N08B Unit R Thermal Resistance, Junction to Case, Max. 1.2 JC o C/W R Thermal Resistance, Junction to Ambient, Max. (Note 1a) 50 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS037N08B Rev. C2