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FDMS10C4D2N N-Channel Shielded Gate PowerTrench MOSFET September 2016 FDMS10C4D2N N-Channel Shielded Gate PowerTrench MOSFET 100 V, 124 A, 4.2 m Features General Description Shielded Gate MOSFET Technology This N-Channel MV MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max r = 4.2 m at V = 10 V, I = 44 A DS(on) GS D incorporates Shielded Gate technology. This process has been Max r = 14 m at V = 6 V, I = 22 A optimized to minimise on-state resistance and yet maintain DS(on) GS D superior switching performance with best in class soft body ADD diode. 50% lower Qrr than other MOSFET suppliers Applications Lowers switching noise/EMI Industrial Motor Drive MSL1 robust package design Industrial Power Supply 100% UIL tested Industrial Automation RoHS Compliant Battery Operated Tools Battery Protection Solar Inverters UPS and Energy Inverters Energy Storage Load Switch Bottom Top Pin 1 S S D S S G D S Pin 1 D S D D D D G D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 124 C -Continuous T = 100 C (Note 5) 78 C I A D -Continuous T = 25 C (Note 1a) 17 A -Pulsed (Note 4) 510 E Single Pulse Avalanche Energy (Note 3) 337 mJ AS Power Dissipation T = 25 C 125 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.0 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS10C4D2N FDMS10C4D2N Power 56 13 12 mm 3000 units 2016 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS10C4D2N Rev. 1.0