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FDMS8050 N-Channel PowerTrench MOSFET March 2015 FDMS8050 N-Channel PowerTrench MOSFET 30 V, 200 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Max r = 0.65 m at V = 10 V, I = 55 A DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 0.9 m at V = 4.5 V, I = 47 A DS(on) GS D ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized Advanced Package and Silicon combination for low r DS(on) for low gate charge and extremely low r . DS(on) and high efficiency MSL1 robust package design Applications 100% UIL tested OringFET RoHS Compliant Synchronous Rectifier Bottom Top Pin 1 S S D S Pin 1 S G D S D S D D D D G D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous T = 25 C 200 C I -Continuous T = 25 C (Note 1a) 55 A D A -Pulsed (Note 5) 400 E Single Pulse Avalanche Energy (Note 3) 1536 mJ AS Power Dissipation T = 25 C 156 C P W D Power Dissipation T = 25 C (Note 1a) 2.7 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 0.83 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 45 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8050 FDMS8050 Power 56 13 12 mm 3000 units 2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS8050 Rev. 1.2