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FDMS86550 N-Channel PowerTrench MOSFET March 2015 FDMS86550 N-Channel PowerTrench MOSFET 60 V, 234 A, 1.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max r = 1.65 m at V = 10 V, I = 32 A DS(on) GS D Semiconductors advanced PowerTrench process that has Max r = 2.2 m at V = 8 V, I = 27 A DS(on) GS D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Advanced Package and Silicon combination for low r DS(on) and high efficiency MSL1 robust package design Applications 100% UIL tested Primary DC-DC MOSFET RoHS Compliant Secondary Synchronous Rectifier Load Switch Bottom Top Pin 1 S S D S Pin 1 S G D S D S D D D D G D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 234 C -Continuous T = 100 C (Note 5) 148 C I A D -Continuous T = 25 C (Note 1a) 32 A -Pulsed (Note 4) 1021 E Single Pulse Avalanche Energy (Note 3) 937 mJ AS Power Dissipation T = 25 C 156 C P W D Power Dissipation T = 25 C (Note 1a) 2.7 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 0.8 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 45 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86550 FDMS86550 Power 56 13 12 mm 3000 units 2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS86550 Rev.1.7