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V = 10 V, I = 5 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC) technology. This advanced MOSFET family has the smallest Low C (Typ. 10 pF) rss on-state resistance among the planar MOSFET, and also pro- 100% Avalanche Tested vides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode Improved dv/dt Capability allows UniFET II MOSFET to withstand over 2kV HBM surge ESD Improved Capability stress. This device family is suitable for switching power con- RoHS Compliant verter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- Applications lasts. LCD/ LED/ PDP TV Lighting Uninterruptible Power Supply D G G D G S D TO-220 TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDP10N60NZ FDPF10N60NZ Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 25 V GSS o - Continuous (T = 25 C) 10 10* C I Drain Current A D o - Continuous (T = 100 C) 6 6* C I Drain Current - Pulsed (Note 1) 40 40* A DM E Single Pulsed Avalanche Energy (Note 2) 550 mJ AS I Avalanche Current (Note 1) 10 A AR E Repetitive Avalanche Energy (Note 1) 18.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 185 38 W C P Power Dissipation D o o - Derate Above 25C1.50.3W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Dran current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Unit FDP10N60NZ FDPF10N60NZ R Thermal Resistance, Junction to Case, Max. 0.68 3.3 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP10N60NZ / FDPF10N60NZ Rev. C1