FDP8870 ON Semiconductor

FDP8870 electronic component of ON Semiconductor
FDP8870 ON Semiconductor
FDP8870 MOSFETs
FDP8870  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDP8870 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDP8870 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDP8870
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 30V N-Channel PowerTrench
Datasheet: FDP8870 Datasheet (PDF)
Price (USD)
1: USD 4.2072 ea
Line Total: USD 4.21 
Availability : 59
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
1$ 4.2072
10$ 2.7365
50$ 2.2275
100$ 1.9866
500$ 1.8784
1000$ 1.8298

Availability 59
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.2072
10$ 2.7365
50$ 2.2275
100$ 1.9866
500$ 1.8784
1000$ 1.8298

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Continuous Drain Current
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We are delighted to provide the FDP8870 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDP8870 and other electronic components in the MOSFETs category and beyond.

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The FDP8870 with MOSFET 30V N-Channel PowerTrench is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed and manufactured by ON Semiconductor. It is a N-Channel device with Gate-Source voltage ratings of -20V to +20V, Drain-Source voltage ratings of -30V to +30V, and RDS(ON) of 5.6mO @ 10V. It offers excellent thermal response, is ideal for high-frequency switching applications, and has high-speed operation with low gate charge for low power loss. This MOSFET also features a fast body diode with low reverse recovery charge for improved system efficiency.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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