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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDPF16N50 / FDPF16N50T N-Channel UniFET MOSFET November 2013 FDPF16N50 / FDPF16N50T TM N-Channel UniFET MOSFET 500 V, 16 A, 380 m Features Description TM R = 380 m (Max.) V = 10 V, I = 8 A UniFET MOSFET is Fairchild Semiconductors high voltage D DS(on) GS MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 20 pF) provide better switching performance and higher avalanche 100% Avalanche Tested energy strength. This device family is suitable for switching power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic LCD/LED/PDP TV lamp ballasts. Lighting Uninterruptible Power Supply D G G D TO-220F S S TC = 25C unless otherwise noted . Absolute Maximum Ratings FDPF16N50 Symbol Parameter Unit FDPF16N50T V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25 C) 16* A D C - Continuous (T = 100 C) 9.6* A C (Note 1) I Drain Current - Pulsed 64* A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 780 mJ AS I Avalanche Current (Note 1) 16 A AR E Repetitive Avalanche Energy (Note 1) 20 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25 C) 38.5 W D C - Derate above 25 C 0.3 W/ C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, L 300 C 1/8 from Case for 5 Seconds * Drain current limited by maximum junction temperature. Thermal Characteristics FDPF16N50 Symbol Parameter Unit FDPF16N50T R Thermal Resistance, Junction-to-Case, Max. 3.3 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA www.fairchildsemi.com 2012 Fairchild Semiconductor Corporation 1 FDPF16N50 / FDPF16N50T Rev C2