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V = 10 V, I = 25.5 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 55 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 63 pF) rss provide better switching performance and higher avalanche energy strength. This device family is suitable for switching Applications power converter applications such as power factor correction PDP TV (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Lighting Uninterruptible Power Supply AC-DC Power Supply D D D G G D G G G S D S S S TO-220F TO-220F TO-220 TO-220F Y-formed LG-formed S Absolute Maximum Ratings T = 25C unless otherwise noted. C FDPF51N25 FDP51N25 FDPF51N25YDTU Symbol Parameter FDPF51N25RDTU Unit V Drain-Source Voltage 250 V DSS I Drain Current - Continuous (T = 25C) 51 51* A D C - Continuous (T = 100C) 30 30* A C (Note 1) I Drain Current - Pulsed A DM 204 204* V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1111 mJ AS (Note 1) I Avalanche Current 51 A AR (Note 1) E Repetitive Avalanche Energy 32 mJ AR V Insulation withstand voltage (RMS) from all three leads to ISO N/A 2500 V external heat sink (t=0.3sec T = 25C) C (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 320 38 W D C - Derate Above 25C 3.7 0.3 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, L 300 C 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature. Thermal Characteristics FDPF51N25 FDP51N25 FDPF51N25YDTU Symbol Parameter FDPF51N25RDTU Unit R Thermal Resistance, Junction-to-Case, Max. 0.39 3.3 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP51N25 / FDPF51N25 Rev. 1.8