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FDS86267P P-Channel Shielded Gate PowerTrench MOSFET May 2015 FDS86267P P-Channel Shielded Gate PowerTrench MOSFET -150 V, -2.2 A, 255 m Features General Description This P-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductors advanced PowerTrench process that Max r = 255 m at V = -10 V, I = -2.2 A DS(on) GS D incorporates shielded gate technology. The process has been optimized for the on-state resistance and yet maintain superior Max r = 290 m at V = -6 V, I = -2 A DS(on) GS D switching performance. Very Low r Mid Voltage P-channel Silicon Technology DS(on) Optimised for Low Qg This Product is Optimised for Fast Switching Applications as Applications well as Load Switch Applications Active Clamp Switch 100% UIL Tested Load Switch RoHS Compliant D D D G 5 4 D D S D 6 3 S D 7 2 G SO-8 S D 8 1 S S Pin 1 S MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage -150 V DS V Gate to Source Voltage 25 V GS Drain Current -Continuous (Note 1a) -2.2 I A D -Pulsed (Note 4) -34 E Single Pulse Avalanche Energy (Note 3) 54 mJ AS Power Dissipation T = 25 C (Note 1a) 2.5 A P W D Power Dissipation T = 25 C (Note 1b) 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 125 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS86267P FDS86267P SO-8 13 12 mm 2500 units 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDS86267P Rev 1.0