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FDS89141 Dual N-Channel Shielded Gate PowerTrench MOSFET September 2015 FDS89141 Dual N-Channel Shielded Gate PowerTrench MOSFET 100 V, 3.5 A, 62 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max r = 62 m at V = 10 V, I = 3.5 A DS(on) GS D incorporates Shielded Gate technology. This process has been Max r = 100 m at V = 6 V, I = 2.8 A DS(on) GS D optimized for r , switching performance and ruggedness. DS(on) High performance trench technology for extremely low r DS(on) Applications High power and current handling capability in a widely used surface mount package Synchronous Rectifier 100% UIL Tested Primary Switch For Bridge Topology RoHS Compliant D2 D2 G2 D2 4 5 D1 D1 D2 S2 6 Q2Q2 3 G2 D1 7 G1 2 S2 Q1Q1 G1 D1 8 1 S1 S1 Pin 1 SO-8 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous 3.5 I A D -Pulsed 18 E Single Pulse Avalanche Energy (Note 3) 37 mJ AS Power Dissipation T = 25 C (Note 1a) 31 A P W D Power Dissipation T = 25 C (Note 1b) 1.6 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 40 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS89141 FDS89141 SO-8 13 12 mm 2500 units 2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS89141 Rev.1.2