ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDSS2407 N-Channel Dual MOSFET FDSS2407 N-Channel Dual MOSFET General Description 62V, 3.3A, 132m This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. Features A drain to source voltage feedback signal and 2. A gate drive disable control function that previously required 62V, 132m , 5V Logic Level Gate Dual MOSFET in SO-8 external discrete circuitry. Including these functions within the MOSFET saves printed circuit board space. The drain to 5V Logic Level feedback signal of the drain to source source voltage feedback function provides a 5V level output voltage. Multiple devices can be wired ORd to a single whenever the drain to source voltage is above 62V. This can monitoring circuit input. monitor the time an inductive load takes to dissipate its stored energy. Multiple feedback signals can be wired Gate Drive Disable Input. Multiple devices controllable by ORd together to a single input of the monitoring circuit. a single disable transistor. The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function Qualified to AEC Q101 permits a second control circuit the ability to deactivate the load if necessary. It can also be wired ORd allowing Applications multiple devices to be controlled by a single open collector / drain control transistor. Automotive Injector Driver Solenoid Driver Internal Diagram Source 1 1 8 Drain 1 Branding Dash 5 2 7 Gate Disable Gate 1 1 2 3 4 SO-8 3 6 Source 2 Drain 2 Pin 5 - Drain Feedback Output Pin 7 - Gate Drive Disable Input 4 5 Gate 2 Drain FBK Publication Order Number: 2004 Semiconductor Components Industries, LLC. FDSS2407/D October-2017,Rev 1