Product Information

FES6G

FES6G electronic component of ON Semiconductor

Datasheet
Rectifiers 6A 200V Ultra Fast

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.436 ea
Line Total: USD 2180

0 - Global Stock
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 5000
Multiples : 5000

Stock Image

FES6G
ON Semiconductor

5000 : USD 0.5482
10000 : USD 0.5431
15000 : USD 0.5381
20000 : USD 0.5329
25000 : USD 0.5278
30000 : USD 0.5226
40000 : USD 0.5175
50000 : USD 0.5123
100000 : USD 0.5072

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 5000
Multiples : 5000

Stock Image

FES6G
ON Semiconductor

5000 : USD 0.5359

0 - WHS 3


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

FES6G
ON Semiconductor

1 : USD 3.0292
10 : USD 1.1327
100 : USD 0.8461
500 : USD 0.699
1000 : USD 0.552
2500 : USD 0.5189

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Ultrafast Rectifiers, Surface Mount, 6 A, 200 V - 600 V FES6, NRVFES6 Series Features www.onsemi.com Very Low Profile: Typical Height of 1.1 mm Ultrafast Recovery Time Low Forward Voltage Drop 3 Low Thermal Resistance Very Stable Operation at Industrial Temperature, 150C RoHS Compliant 2 Green Molding Compound as per IEC61249 Standard 1 TO2773LD Lead Free in Compliance with EU RoHS 2011/65/EU Directive CASE 340BQ With DAP Option Only NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Anode 1 3 Qualified and PPAP Capable Cathode Anode 2 MAXIMUM RATINGS Parameter Symbol Value Unit Repetitive Peak Reverse Voltage V V RRM MARKING DIAGRAM FES6D 200 FES6G 400 FES6J 600 Y&Z&3 * Average Forward Rectified Current I 6 A F(AV) Peak Forward Surge Current: 8.3 ms I 80 A FSM Single Half SineWave Superimposed Y = ON Semiconductor Logo on Rated Load &Z = Assembly Plant Code &3 = Date Code (Year & Week) Operating Junction Temperature Range T 55 to C J * = Specific Device Code +175 FES6D, FES6G, FES6J Storage Temperature Range T 55 to C STG +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Part Number Top Mark Package Shipping FES6D FES6D NRVFES6D* FES6G FES6G TO277 3L (with DAP Option only) 5000 / Tape & Reel NRVFES6G* FES6J FES6J NRVFES6J* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: April, 2020 Rev. 4 FES6D/DFES6, NRVFES6 Series THERMAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted) (Note 1) A Parameter Symbol Value Unit Thermal Characteristics, JunctiontoLead, Thermocouple Soldered to Cathode 6 C/W JL Thermal Resistance, JunctiontoAmbient R 100 C/W JA 1. Per JESD513 Recommended Thermal Test Board. ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted) A Value FES6D FES6G FES6J Symbol Parameter Conditions Unit V Maximum Instantaneous Forward V I = 6 A 1.05 1.20 2.2 F F Voltage (Note 2) I = 6 A, T = 125C 0.90 1.00 1.80 F J I Maximum Reverse Current T = 25C 2 A R J at Rated V R T = 125C 200 500 J C Typical Junction Capacitance V = 4 V, f = 1 MHz 60 45 pF J R T Typical Reverse Recovery Time I = 0.5 A, I = 1 A, I = 0.25 A 25 ns rr F R RR I = 1 A, di/dt = 50 A/ s, V = 30 V 45 F R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 s, 1% duty cycle www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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