DATA SHEET www.onsemi.com Ultrafast Dual Diode 60 A, 200 V 3 1 2 FFA60UP20DN 1.Anode 2. Cathode 3. Anode Description The FFA60UP20DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applications as 1 Welder and UPS application. 2 3 1.Anode 2.Cathode 3.Anode Features TO3P3LD / EIAJ SC65, ISOLATED Ultrafast Recovery, T < 32 ns ( I = 30 A) rr F CASE 340BZ Max. Forward Voltage, V = 1.15 V ( T = 25C) F C Reverse Voltage: V = 200 V RRM Avalanche Energy Rated MARKING DIAGRAM These Devices are PbFree and are RoHS Compliant Applications Power Switching Circuits Output Rectifiers Y&Z&3&K FreeWheeling Diodes F60UP20DN SMPS Welder UPS ABSOLUTE MAXIMUM RATINGS Y = Logo (per diode) T = 25C unless otherwise noted &Z = Assembly Plant Code C &3 = Date Code Parameter Symbol Value Unit &K = Lot Run Traceability Code DC Blocking Voltage V 200 V R F60UP20DN = Specific Device Code Peak Repetitive Reverse Voltage V 200 V RRM Working Peak Reverse Voltage V 200 V RWM ORDERING INFORMATION Average Rectified Forward Current I 30 A F(AV) See detailed ordering and shipping information on page 2 of ( T = 100C) C this data sheet. Nonrepetitive Peak Surge Current I 300 A FSM 60 Hz Single HalfSine Wave Operating Junction and Storage T , T 65 to C J STG Temperature +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Maximum Thermal Resistance, R 1.4 C/W JC Junction to Case Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2021 Rev. 2 FFA60UP20DN/DFFA60UP20DN ELECTRICAL CHARACTERISTICS (per diode) T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Unit V (Note 1) Maximum Instantaneous Forward I = 30 A, T = 25C 1.15 V F F C Voltage I = 30 A, T = 100C 1.0 F C I (Note 1) Maximum Instantaneous Reverse V = 200 V, T = 25C 10 A R R C Current V = 200 V, T = 100C 100 R C t Reverse Recovery Time I = 30 A, di /dt = 200 A/ s, V = 130 V 32 ns rr F F R I Reverse Recovery Current 2.4 A rr Q Reverse Recovery Charge 38.4 nC rr t Maximum Reverse Recovery Time I = 1 A, di /dt = 100 A/ s 40 ns rr F F W Avalanche Energy L = 40 mH 2 mJ AVL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% TEST CIRCUIT AND WAVEFORMS V Amplitude and GE R Control dI /dt G F L t and t Control I 1 2 F t rr Current DUT dI F Sense I R F dt G t t a b + 0 V V DD GE IGBT t 1 0.25 I RM t 2 I RM Figure 1. Diode Reverse Recovery Test Circuit & Waveform L = 40 mH R < 0.1 V = 50 V DD EAVL = 1/2LI2 V /(V V ) R(AVL) R(ALV) DD V Q1 = IGBT (BV > DUT V ) AVL CES R(AVL) LR + Current V Sense DD I I L L Q1 I V V DD DUT t t t t 0 1 2 Figure 2. Unclamped Inductive Switching Test Circuit & Waveform ORDERING INFORMATION Part Number Top Mark Package Shipping FFA60UP20DNTU F60UP20DN TO3P3LD (PbFree) 30 Units / Tube www.onsemi.com 2