Product Information

FGB40T65SPD-F085

FGB40T65SPD-F085 electronic component of ON Semiconductor

Datasheet
IGBT Transistors Trench IGBT

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.3367 ea
Line Total: USD 6.34

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

FGB40T65SPD-F085
ON Semiconductor

1 : USD 6.3367
10 : USD 4.1528
25 : USD 3.925
100 : USD 3.4072
500 : USD 2.8997
800 : USD 2.5373

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FGB40T65SPD F085 650V 40A Field Stop Trench IGBT FGB40T65SPD F085 650V, 40A Field Stop Trench IGBT Features General Description AEC-Q101 Qualified Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD F085 offers the optimum performance with Low Saturation Voltage : V = 2.0 V(Typ.) I = 40 A CE(sat) C both low conduction loss and switching loss for a high efficiency 100% of the parts are dynamically tested (Note 1) o operation in various applications, while provides 50V higher Short Circuit Ruggedness > 5 s 25 C blocking voltage and rugged high current switching reliability. o Maximum Junction Temperature : T = 175 C J Meanwhile, this part also offers and advantage of outstanding Fast Switching performance in parallel operation. Tight Parameter Distribution Positive Temperature Coefficient for Easy Parallel Operation Applications Copacked with soft, fast recovery diode RoHS Compliant Onboard Charger AirCon Compressor PTC Heater Motor Drivers Other automotive power-train and auxiliary applications C COLLECTOR (FLANGE) G 2 TO-263AB/D -PAK G C E E Absolute Maximum Ratings Symbol Description Ratings Units V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V o Collector Current T = 25 C80 A C I C o Collector Current T = 100 C40 A C I Pulsed Collector Current (Note 2) 120 A CM o Diode Forward Current T = 25 C40 A C I F o Diode Forward Current T = 100 C20 A C I Pulsed Diode Maximum Forward Current (Note 2) 120 A FM o Maximum Power Dissipation T = 25 C 267 W C P D o Maximum Power Dissipation T = 100 C 134 W C o SCWT Short Circuit Withstand Time T = 25 C5 s C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1: VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20 , Inductive Load 2: Repetitive rating: pulse width limited by max. junction temperature Semiconductor Components Industries, LLC, 2016 1 www.onsemi.com November 2016 - Rev. 1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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