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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 9.5 A D planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to Low Gate Charge (Typ. 40.5 nC) reduce on-state resistance, and to provide superior Low C (Typ. 85 pF) rss switching performance and high avalanche energy strength. These devices are suitable for switched mode 100% Avalanche Tested power supplies, active power factor correction (PFC), RoHS Compliant and electronic lamp ballasts. D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQB19N20C TM Unit 200 V Drain-Source Voltage V DSS I Drain Current - Continuous (T = 25C) 19.0 A D C - Continuous (T = 100C) A C 12.1 I Drain Current - Pulsed (Note 1) 76.0 A DM V Gate-Source voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 433 mJ AS (Note 1) I Avalanche Current 19.0 A AR (Note 1) E Repetitive Avalanche Energy 13.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25C)* 3.13 W D A 139 W Power Dissipation (T = 25C) C - Derate above 25C 1.11 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQB19N20C TM Unit R Thermal Resistance, Junction to Case, Max. 0.9 JC o Thermal Resistance, Junction to Ambient ( Minimum Pad of 2 -oz Copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient ( *1 in Pad of 2 -oz Copper), Max. 40 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQB19N20C Rev. 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