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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 1.9 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 4.8 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 6.0 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. RoHS Compliant D D G G S D-PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQD5N20LTM Unit V Drain-Source Voltage 200 V DSS I - Continuous (T = 25C) Drain Current 3.8 A D C - Continuous (T = 100C) 2.4 A C I Drain Current - Pulsed (Note 1) 15.2 A DM V Gate-Source Voltage 20 V GSS E Single Pulsed Avalanche Energy (Note 2) 60 mJ AS I Avalanche Current (Note 1) 3.8 A AR E Repetitive Avalanche Energy (Note 1) 3.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25C) * P 2.5 W A D Power Dissipation (T = 25C) 37 W C - Derate above 25C 0.29 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Unit FQD5N20LTM R Thermal Resistance, Junction to Case, Max. 3.4 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQD5N20L Rev. 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