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V = 10 V, This N-Channel enhancement mode power MOSFET is pro- DS(on) GS I = 1.5 A duced using Fairchild Semiconductors proprietary planar stripe D and DMOS technology. This advanced MOSFET technology Low Gate Charge (Typ. 13 nC) has been especially tailored to reduce on-state resistance, and Low Crss (Typ. 5.5 pF) to provide superior switching performance and high avalanche 100% Avalanche Tested energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and elec- tronic lamp ballasts. D G G D G S D TO-220F TO-220 S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP3N80C FQPF3N80C Unit V Drain to Source Voltage 800 V DSS o -Continuous (T = 25 C) 3 3 * A C I Drain Current D o -Continuous (T = 100 C) 1.9 1.9 * A C I Drain Current - Pulsed (Note 1) 12 12 * A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 320 mJ AS I Avalanche Current (Note 1) 3A AR E Repetitive Avalanche Energy (Note 1) 10.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 107 39 W C P Power Dissipation D o - Derate above 25 C 0.85 0.31 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Unit FQP3N80C FQPF3N80C R Thermal Resistance, Junction to Case, Max 1.17 3.2 C/W JC R Thermal Resistance, Junction to Ambient, Max 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP3N80C / FQPF3N80C Rev. C2