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V = -10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = -1.35 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 18 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ 9.5 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S G G D S TO-220 D Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP3P50 Unit V Drain-Source Voltage -500 V DSS I - Continuous (T = 25C) Drain Current -2.7 A D C - Continuous (T = 100C) -1.71 A C I Drain Current - Pulsed (Note 1) -10.8 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 250 mJ AS I Avalanche Current (Note 1) -2.7 A AR E (Note 1) Repetitive Avalanche Energy 8.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt -4.5 V/ns P Power Dissipation (T = 25C) 85 W D C - Derate above 25C 0.68 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics FQP3P50 + 6 Thermal Resistance, Junction-to-Case, Max. 1.47 + Thermal Resistance, Junction-to-Ambient, Max. - & 6 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP3P50 Rev. 2.4