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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 4 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 45 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 14 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G G D S D TO-220 S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C S ymb ol Paramet er F Q P9N 90C FQPF9N90CT Unit V Drain-Source Voltage 900 V DSS I - Continuous (T = 25C) Drain Current 8.0 8.0 * A D C - Continuous (T = 100C) 2.8 2.8 * A C I (Note 1) Drain Current - Pulsed 32 32 * A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 900 mJ AS I Avalanche Current (Note 1) 8.0 A AR E (Note 1) Repetitive Avalanche Energy 20.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25C) 205 68 W D C - Derate above 25C 1.64 0.54 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics S ymb ol P arameter F QP 9N90C FQPF9N90CT Unit R Thermal Resistance, Junction-to-Case, Max. 0.61 1.85 C/W JC R Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- C/W JS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP9N90C / FQPF9N90C Rev. 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