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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FQ T5P10 P-Channel MOSFET March 2013 FQT5P10 P-Channel QFET MOSFET -100 V, -1.0 A, 1.05 Features Description - 1. 0 A, - 100 V, R = 1.05 (Max.) V =-10 V, I =- 0. 5 A This P-Channel enhancement mode power MOSFET is DS(on) GS D produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 6.3 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 18 pF) MOSFET technology has been especially tailored to 100% Avalanche Tested reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. D D S G G SOT-223 S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQT5P10 Unit V Drain-Source Voltage -100 V DSS I - Continuous (T = 25C) Drain Current -1.0 A D C - Continuous (T = 70C) -0.8 A C I (Note 1) Drain Current - Pulsed -4.0 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 55 mJ AS I Avalanche Current (Note 1) -1.0 A AR E (Note 1) Repetitive Avalanche Energy 0.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns P Power Dissipation (T = 25C) 2.0 W D C - Derate above 25C 0.016 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Unit R Thermal Resistance, Junction-to-Ambient * -- 62.5 C/W JA * When mounted on the minimum pad size recommended (PCB Mount) www.fairchildsemi.com 200 2 Fairchild Semiconductor Corporation FQ T 5P 10 Rev. C0