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V = -10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = -4.7 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 13 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 45 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.. S D G G S I-PAK D-PAK G D S D Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQD11P06TM / FQU11P06TU Unit V Drain-Source Voltage -60 V DSS I - Continuous (T = 25C) Drain Current -9.4 A D C - Continuous (T = 100C) -5.95 A C I (Note 1) Drain Current - Pulsed -37.6 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 160 mJ AS I Avalanche Current (Note 1) -9.4 A AR E (Note 1) Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns Power Dissipation (T = 25C) * 2.5 W P A D Power Dissipation (T = 25C) 38 W C - Derate above 25C 0.3 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQD11P06TM / Unit FQU11P06TU R Thermal Resistance, Junction to Case, Max . 3.28 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQD11P06 / FQU11P06 Rev. 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